SIR494DP-T1-GE3
Производится
Увеличить
Краткое описание:
N-CH MOSFET 12V 60A 1.2mR TO-263-3 SM
Дополнительная информация
N-CHANNEL MOSFET, 12V Vdss, 60A continuous drain current, and 1.2mΩ Rds On at 10V. Features 104W max power dissipation and a TO-263-3 surface mount package. Operating temperature range from -55°C to 150°C, with a fall time of 54ns and turn-on delay of 42ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 54ns |
| Packaging | Tape and Reel |
| Rds On Max | 1.2mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 6.9nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 42ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 54ns |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 12V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
