SIR681DP-T1-RE3
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Краткое описание:
N-Channel 80 V (D-S) MOSFET, PowerPAK SO-8
Дополнительная информация
The SIR681DP-T1-RE3 is an N-channel TrenchFET Gen IV power MOSFET featuring high-density design and optimized low Rds(on) x Qg figure-of-merit. It is designed for synchronous rectification, primary-side switch, and DC/DC converters.
| RoHS | Compliant |
| Halogen-free | Yes |
| Gate Charge (Qg) | 62nC |
| Power Dissipation (Pd) | 104W |
| Operating Temperature Range | -55 to +150°C |
| Continuous Drain Current (Id) | 100A |
| Drain-to-Source Voltage (Vds) | 80V |
| Gate-Source Threshold Voltage (Vgs th) | 2.0 to 4.0V |
| Static Drain-to-Source On-Resistance (Rds on) Max | 1.3mOhms |
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