SIR800DP-T1-GE3
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Краткое описание:
N-CH MOSFET 20V 50A 1.9mR PPAK SO-8
Дополнительная информация
N-channel MOSFET featuring 20V drain-source voltage and 50A continuous drain current. Offers low 1.9mR drain-to-source resistance and 2.3mR Rds On max. Operates with a 12V gate-to-source voltage and exhibits 27ns turn-on delay and fall times. This surface mount component, packaged on tape and reel, boasts a max power dissipation of 69W and an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.3mR |
| Nominal Vgs | 600mV |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.125nF |
| Threshold Voltage | 600mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 69W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.9mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 20V |
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