SIR826DP-T1-GE3
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Краткое описание:
N-Ch MOSFET 80V 60A 4.8mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET with 80V drain-source voltage and 4.8mΩ drain-source resistance at 10V gate-source voltage. Features 60A continuous drain current, 150°C maximum operating temperature, and 104W maximum power dissipation. This surface mount device in an SOIC package offers fast switching with an 8ns fall time and 15ns turn-on delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.8mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.9nF |
| Power Dissipation | 6.25W |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 80V |
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