SIR870ADP-T1-GE3
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Краткое описание:
N-Channel MOSFET, 100V, 60A, 6.6mR, Surface Mount
Дополнительная информация
N-channel power MOSFET with 100V drain-source voltage and 60A continuous drain current. Features low 6.6mΩ drain-source resistance and 104W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. This surface-mount component offers fast switching with turn-on delay of 17ns and fall time of 9ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.26mm |
| Height | 1.12mm |
| Length | 6.25mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.6mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.866nF |
| Power Dissipation | 6.25W |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 100V |
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