SIR871DP-T1-GE3

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SIR871DP-T1-GE3 - Vishay
Краткое описание: MOSFET P-CH 100V 48A POWERPAK SO-8
Производитель Vishay
Категория Без категории
Статус производства Производится (ACTIVE)

Дополнительная информация

The SIR871DP-T1-GE3 is a P-Channel 100 V (D-S) MOSFET designed with TrenchFET technology. It features a high continuous drain current rating of 48A and is housed in a PowerPAK SO-8 package, which is optimized for high power density and low thermal resistance. The device is lead-free, halogen-free, and RoHS compliant, designed for applications such as active clamping in DC/DC adapters.
RoHS Compliant
Lead-free Yes
Halogen-free Yes
Configuration Single
Gate Charge (Qg) Max 95nC
Operating Temperature Range -55 to 150°C
Gate to Source Voltage (Vgs) 20V
Drain to Source Voltage (Vdss) 100V
Maximum Power Dissipation (Pd) 104W
Continuous Drain Current (Id) @ 25°C 48A
Static Drain-Source On-State Resistance (Rds On) Max 14mOhm