The SIR871DP-T1-GE3 is a P-Channel 100 V (D-S) MOSFET designed with TrenchFET technology. It features a high continuous drain current rating of 48A and is housed in a PowerPAK SO-8 package, which is optimized for high power density and low thermal resistance. The device is lead-free, halogen-free, and RoHS compliant, designed for applications such as active clamping in DC/DC adapters.
| RoHS |
Compliant |
| Lead-free |
Yes |
| Halogen-free |
Yes |
| Configuration |
Single |
| Gate Charge (Qg) Max |
95nC |
| Operating Temperature Range |
-55 to 150°C |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Voltage (Vdss) |
100V |
| Maximum Power Dissipation (Pd) |
104W |
| Continuous Drain Current (Id) @ 25°C |
48A |
| Static Drain-Source On-State Resistance (Rds On) Max |
14mOhm |