SIR890DP-T1-GE3
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Краткое описание:
N-CH MOSFET 20V 50A 2.9mR SOIC Surface Mount
Дополнительная информация
N-CHANNEL MOSFET, 20V Vdss, 50A continuous drain current, and 2.9mOhm maximum drain-source on-resistance at 10V Vgs. This surface mount component features a 5W maximum power dissipation and operates across a wide temperature range of -55°C to 150°C. It is supplied in a SOIC package on tape and reel, offering low on-resistance and fast switching characteristics with turn-on delay times of 30ns and fall times of 25ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.9mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 2.747nF |
| Threshold Voltage | 2.6V |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 2.9mR |
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