SIRA10DP-T1-GE3
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Краткое описание:
30V 30A N-CH MOSFET, 3.7mR Rds On, SO-8
Дополнительная информация
N-channel MOSFET with 30V drain-source breakdown voltage and 30A continuous drain current. Features low 3.7mΩ Rds(on) and 1.1V threshold voltage. Offers fast switching with 20ns turn-on and 27ns turn-off delay times. Surface mountable in a SO-8 package, this component supports a maximum power dissipation of 40W and operates across a -55°C to 150°C temperature range.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.197inch |
| Height | 0.042inch |
| Length | 0.235inch |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.7mR |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.425nF |
| Power Dissipation | 40W |
| Threshold Voltage | 1.1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.7mR |
| Gate to Source Voltage (Vgs) | 2.2V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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