SIRA12DP-T1-GE3
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Краткое описание:
30V N-CH MOSFET, 25A, 4.3mR Rds(on), SOIC, SM
Дополнительная информация
N-Channel MOSFET, General Purpose Power Transistor in SOIC package. Features 30V Drain to Source Breakdown Voltage, 25A Continuous Drain Current, and 4.3mΩ Max Drain-Source On Resistance. Operates with a 2.2V Gate to Source Threshold Voltage and offers 31W Max Power Dissipation. Includes fast switching characteristics with 20ns Turn-On Delay and 25ns Turn-Off Delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.197inch |
| Height | 0.042inch |
| Length | 0.235inch |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.3mR |
| Package/Case | SOIC |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.07nF |
| Power Dissipation | 31W |
| Threshold Voltage | 1.1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 31W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.3mR |
| Gate to Source Voltage (Vgs) | 2.2V |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.3mR |
| Drain to Source Breakdown Voltage | 30V |
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