SIRA14DP-T1-GE3
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Краткое описание:
N-Channel MOSFET, 30V, 20A, 5.1mR RdsOn, 1.1V Vgs(th)
Дополнительная информация
N-channel MOSFET transistor featuring a 30V drain-to-source breakdown voltage and 20A continuous drain current. Offers a low 5.1mΩ Rds On at a 10V gate-to-source voltage, with a 1.1V threshold voltage. Designed for surface mounting with a 31.2W power dissipation and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 16ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.197inch |
| Height | 0.042inch |
| Length | 0.235inch |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.1mR |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.45nF |
| Power Dissipation | 31.2W |
| Threshold Voltage | 1.1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 31.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.1mR |
| Gate to Source Voltage (Vgs) | 2.2V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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