SIRA90DP-T1-RE3
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Краткое описание:
N-Channel 30 V (D-S) MOSFET, 100A, PowerPAK SO-8
Дополнительная информация
The SIRA90DP is a high-performance N-Channel TrenchFET Gen IV power MOSFET designed for high efficiency power conversion. It features extremely low RDS(on) and low gate charge, making it suitable for synchronous rectification, DC/DC converters, and OR-ing applications.
| RoHS | Compliant |
| Halogen-free | Yes |
| Gate Charge (Qg) | 38nC |
| RDS(on) Max (at Vgs = 10V) | 0.83mOhms |
| Operating Temperature Range | -55 to +150°C |
| RDS(on) Max (at Vgs = 4.5V) | 1.25mOhms |
| Continuous Drain Current (Id) | 100A |
| Drain-to-Source Voltage (Vdss) | 30V |
| Gate-Source Threshold Voltage (Vgs th) | 1.2 to 2.2V |