SIS184DN-T1-GE3
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Краткое описание:
N-Channel 40 V (D-S) MOSFET, 1.8 mOhm @ 10 V, 40 A, PowerPAK 1212-8
Дополнительная информация
The SIS184DN-T1-GE3 is a high-performance N-channel TrenchFET Gen IV power MOSFET designed for high power density applications. It features extremely low on-resistance and is 100% Rg and UIS tested. The device is housed in a thermally enhanced PowerPAK 1212-8 package which provides a small footprint similar to a TSOP-6 with the thermal performance of a much larger SO-8.
| RoHS | Compliant |
| Halogen-free | Yes |
| Total Gate Charge @ 10V | 42nC |
| Gate-Source Voltage (Vgs) | ±20V |
| Operating Temperature Range | -55 to 150°C |
| Power Dissipation (Tc=25°C) | 52W |
| Drain-to-Source Breakdown Voltage | 40V |
| Continuous Drain Current (Tc=25°C) | 40A |
| Static Drain-Source On-Resistance (Max) @ 10V | 0.00185Ohm |
| Static Drain-Source On-Resistance (Max) @ 4.5V | 0.00288Ohm |