SIS407DN-T1-GE3
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Краткое описание:
P-CH MOSFET, -20V, -25A, 8.2mR, 33W, SMT
Дополнительная информация
P-channel MOSFET with a 20V drain-source voltage (Vdss) and 15.4A continuous drain current (ID). Features low on-resistance of 8.2mR (typical) and 9.5mR (max), with a threshold voltage of -400mV. Operates across a wide temperature range from -55°C to 150°C, supporting a maximum power dissipation of 33W. This surface-mount component is packaged in Tape and Reel, offering fast switching with turn-on delay of 23ns and fall time of 38ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 38ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.76nF |
| Threshold Voltage | -400mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 23ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 92ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 33W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.2mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | -25A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 9.5mR |
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