SIS410DN-T1-GE3
Производится
Увеличить
Краткое описание:
N-CH MOSFET 20V 35A 4.8mR TrenchFET Surface Mount
Дополнительная информация
N-channel MOSFET, 20V Vdss, 35A continuous drain current, and 4.8mR maximum drain-source on-resistance. Features a 1.2V threshold voltage, 1.6nF input capacitance, and fast switching times with 25ns turn-on and 30ns turn-off delays. Operates from -55°C to 150°C with 5.2W maximum power dissipation. Surface mountable in a 3.05mm x 3.05mm x 1.04mm PowerPAK 1212 package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.8mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.6nF |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 4.8mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
