SIS412DN-T1-GE3
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Краткое описание:
30V N-CH MOSFET, 24mR Rds(on), 12A ID, 8-Pin PowerPAK
Дополнительная информация
N-channel MOSFET, 30V Vdss, 12A continuous drain current, and 24mR Rds On Max. Features a 1V gate threshold voltage and 15.6W max power dissipation. Surface mountable in an 8-pin PowerPAK 1212 package, this RoHS compliant component offers fast switching with 15ns turn-on and turn-off delay times. Operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 24mR |
| Nominal Vgs | 1V |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 435pF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 15.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 24mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 24MR |
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