SIS413DN-T1-GE3
Производится
Увеличить
Краткое описание:
P-Channel MOSFET, 30V, -18A, 9.4mR, Surface Mount
Дополнительная информация
P-Channel Power MOSFET featuring a -30V drain-to-source breakdown voltage and a low 9.4mΩ drain-to-source resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current of -18A and a maximum power dissipation of 52W. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C, with a gate-to-source voltage of 20V and a threshold voltage of -2.5V. Key switching characteristics include an 8ns fall time and a 45ns turn-off delay time, with an input capacitance of 4.28nF. This RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 9.4mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 4.28nF |
| Power Dissipation | 52W |
| Threshold Voltage | -2.5V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 52W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -18A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain to Source Breakdown Voltage | -30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
