SIS438DN-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 20V 16A 9.5mR 150°C
Дополнительная информация
The SIS438DN-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 27.7W and a continuous drain current of 16A. The device has a drain to source resistance of 7.9mR and a gate to source voltage of 20V. The SIS438DN-T1-GE3 is RoHS compliant and available in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 880pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Max Power Dissipation | 27.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 20V |
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