SIS452DN-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET, 35A, 12V, 3.25mR, Surface Mount
Дополнительная информация
The SIS452DN-T1-GE3 is a single N-channel TrenchFET MOSFET with a maximum continuous drain current of 35A and a maximum drain to source voltage of 12V. It has a maximum drain to source resistance of 2.6mR and a maximum power dissipation of 52W. The device is designed for surface mount applications and has a maximum operating temperature range of -55°C to 150°C. It is compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.25mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.7nF |
| Power Dissipation | 3.8W |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 52W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 12V |
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