SISS27DN-T1-GE3
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Краткое описание:
P-CH MOSFET 30V 50A 5.6mR PPAK 1212-8S
Дополнительная информация
P-channel MOSFET with 30V drain-source voltage and 50A continuous drain current. Features low 5.6mΩ drain-source resistance and 57W maximum power dissipation. Designed for surface mount applications with a PPAK 1212-8S package. Offers fast switching characteristics with 16ns turn-on delay and 20ns fall time. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 830um |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.6mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 5.25nF |
| Power Dissipation | 4.8W |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 57W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 30V |
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