SIZ340DT-T1-GE3
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Краткое описание:
30V 9.5mR 40A Dual N-Ch MOSFET SOT-23
Дополнительная информация
Dual N-Channel MOSFET featuring 30V drain-source voltage and 9.5mΩ drain-source resistance at 10V gate-source voltage. This surface-mount component offers a continuous drain current of 40A and a maximum power dissipation of 31W. Designed with a SOT-23 package, it exhibits fast switching characteristics with a fall time of 7ns and turn-off delay of 16ns. Operating across a temperature range of -55°C to 150°C, this RoHS compliant device is ideal for high-efficiency power applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3mm |
| Height | 0.75mm |
| Length | 3mm |
| Series | PowerPAIR®, TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 760pF |
| Threshold Voltage | 2.4V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 31W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
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