SIZ710DT-T1-GE3
Производится
Увеличить
Краткое описание:
20V 16A N-CH MOSFET, 2.7mR Rds(on), Surface Mount
Дополнительная информация
N-Channel MOSFET featuring 20V Drain-Source Voltage (Vdss) and 16A Continuous Drain Current (ID). Offers low on-resistance with a maximum of 2.7mR at a nominal gate-source voltage of 2.2V. This surface-mount component boasts a maximum power dissipation of 48W and a fast fall time of 12ns. Designed with two N-Channel elements, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.73mm |
| Height | 0.75mm |
| Length | 6mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.8mR |
| Nominal Vgs | 2.2V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 820pF |
| Power Dissipation | 4.6W |
| Threshold Voltage | 2.2V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 48W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 6.8mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
