SIZ790DT-T1-GE3
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Краткое описание:
30V 35A Dual N-Ch MOSFET, 3.8mR Rds(on), Surface Mount
Дополнительная информация
Dual N-Channel MOSFET, 30V Vdss, 35A continuous drain current. Features low 3.8mR drain-to-source resistance and 48W max power dissipation. Operates from -55°C to 150°C with a 1.1V threshold voltage. Surface mount package with 10ns fall time and 830pF input capacitance. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.73mm |
| Height | 0.75mm |
| Length | 6mm |
| Series | SkyFET®, TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 9.3mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 830pF |
| Threshold Voltage | 1.1V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 48W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 30V |
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