SKM111AR
Производится
Увеличить
Краткое описание:
Power Field-Effect Transistor, 200A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, CASE D15, SEMITRANS-4
Дополнительная информация
Power Field-Effect Transistor, 200A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, CASE D15, SEMITRANS-4
| RoHS | Compliant |
| Mount | Panel, Screw |
| Width | 42mm |
| Height | 30mm |
| Length | 78mm |
| Nominal Vgs | 3V |
| Package/Case | Module |
| RoHS Compliant | Yes |
| Input Capacitance | 10pF |
| Power Dissipation | 700W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 60ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 270ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 700W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Voltage (Vdss) | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
