SLA5060
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Краткое описание:
Power MOSFET N/P-CH 60V 6A 12-Pin SIP Hex
Дополнительная информация
Power MOSFET, N/P-channel enhancement mode, featuring 60V drain-source voltage and 6A continuous drain current. This component offers a 220mOhm drain-source resistance at 4V for N-channel and 10V for P-channel. It is housed in a 12-pin Single In Line Package (SIP) with a tab, designed for through-hole mounting. The device operates across a temperature range of -40°C to 150°C and has a maximum power dissipation of 5000mW.
| PCB | 12 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDH93 |
| Pin Count | 12 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | SIP |
| AEC Qualified | No |
| Configuration | Hex |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.8 |
| Package Description | Single In Line Package |
| Package Family Name | SIP |
| Package Height (mm) | 16 |
| Package Length (mm) | 31.5(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 18.7 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 5000mW |
| Min Operating Temperature | -40°C |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 6 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 220@4V@N Channel|220@10V@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 320@10V@ N Channel|790@10V@P ChannelpF |
| Maximum Continuous Drain Current | 6A |
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