SLA5065
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Краткое описание:
N-CH MOSFET 60V 7A Quad SIP 15-Pin
Дополнительная информация
N-channel enhancement mode MOSFET transistor, featuring a 60V drain-source voltage and 7A continuous drain current. This quad-configuration device is housed in a 15-pin Single In Line Package (SIP) with through-hole mounting. Key electrical characteristics include a ±20V gate-source voltage, 2V gate threshold voltage, and 100 mOhm drain-source resistance at 10V. Operating temperature range spans from -40°C to 150°C, with a maximum power dissipation of 4800mW.
| PCB | 15 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | SDH93 |
| Pin Count | 15 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SIP |
| AEC Qualified | No |
| Configuration | Quad |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 4 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.8 |
| Package Description | Single In Line Package |
| Package Family Name | SIP |
| Package Height (mm) | 16 |
| Package Length (mm) | 31.3 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 22.7 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 4800mW |
| Min Operating Temperature | -40°C |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 4 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 100@10VmOhm |
| Typical Input Capacitance @ Vds | 660@10VpF |
| Maximum Continuous Drain Current | 7A |
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