SM6K2T110
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Краткое описание:
N-Channel JFET, 60V, 200mA, 2.4R Rds(on), SMT
Дополнительная информация
N-channel Silicon JFET, surface mountable in SMT6 package. Features 60V Drain to Source Breakdown Voltage (Vdss) and 200mA Continuous Drain Current (ID). Offers a maximum Drain-source On Resistance (Rds On) of 2.4 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Includes fast switching characteristics with turn-on delay time of 6ns and fall time of 5ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 2.9mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.4R |
| Package/Case | SMD/SMT |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Input Capacitance | 15pF |
| Power Dissipation | 300mW |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2.4R |
| Drain to Source Breakdown Voltage | 60V |
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