SMMBT3904LT1G

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SMMBT3904LT1G - Onsemi
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Краткое описание: NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor in a SOT-23-3 package, designed for general-purpose switching and amplification. Features a 40V collector-emitter voltage (VCEO) and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 300MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 300mW. Packaged in a 3000-piece tape and reel.
RoHS Compliant
Width 1.4mm
Height 1.01mm
Length 3.04mm
Series Automotive, AEC-Q101
hFE Min 30
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 300MHz
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 300mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV

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