SMMBT4401LT1G

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SMMBT4401LT1G - Onsemi
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Краткое описание: 40V 600mA NPN BJT Transistor, SOT-23, 250MHz
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 600mA. Offers a transition frequency of 250MHz and a minimum hFE of 100. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. Packaged in a 3000-piece tape and reel, this RoHS compliant component is lead-free.
RoHS Compliant
Width 1.4mm
Height 1.01mm
Length 3.04mm
hFE Min 100
Polarity NPN
Frequency 250MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 300mW
Gain Bandwidth Product 250MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 750mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 750mV

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