SMUN5214DW1T1G
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Краткое описание:
Dual NPN BJT 50V 100mA SOT-363 Digital Transistor
Дополнительная информация
Dual NPN Bipolar Digital Transistor (BRT) in a compact SOT-363-6 package. Features a 50V collector-emitter voltage (VCEO) and 50V collector base voltage (VCBO). Offers a maximum collector current of 100mA and a minimum hFE of 80. Operates across a temperature range of -55°C to 150°C and is RoHS compliant and Halogen Free. Supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| hFE Min | 80 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-363-6 |
| Max Frequency | 10kHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 187mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
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