SN7002NH6327XTSA2
Производится
Увеличить
Краткое описание:
N-Channel JFET, 60V, 200mA, 5R, SOT-23, Surface Mount
Дополнительная информация
N-channel JFET for surface mount applications, featuring a 60V drain-source breakdown voltage and 200mA continuous drain current. This silicon transistor offers a low on-resistance of 5 Ohms and operates within a -55°C to +150°C temperature range. Key switching characteristics include a 2.4ns turn-on delay and 3.6ns fall time, with 45pF input capacitance. Designed for automotive environments, this component is halogen-free, lead-free, and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | Automotive, AEC-Q101, SIPMOS® |
| Polarity | N-CHANNEL |
| Fall Time | 3.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Input Capacitance | 45pF |
| Power Dissipation | 360mW |
| Number of Elements | 1 |
| Turn-On Delay Time | 2.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 5.3ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 360mW |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
