SP8M3FU6TB
Снят с производства
Увеличить
Краткое описание:
N/P-Channel MOSFET, 30V, 4.5A, 51mR, SOP, Surface Mount
Дополнительная информация
N and P-Channel MOSFET transistor in SOP package, suitable for surface mount applications. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 4.5A. Offers a low on-resistance of 51mR at a nominal gate-source voltage of 2.5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Includes a turn-off delay time of 60ns and a fall time of 25ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Packaging | Tape and Reel |
| Rds On Max | 51mR |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | SOP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 230pF |
| Power Dissipation | 2W |
| Threshold Voltage | 2.5V |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 51mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
