SP8M4FU6TB
Снят с производства
Увеличить
Краткое описание:
N/P-Channel FET Transistor, 30V, 7A, 18mR, SOP
Дополнительная информация
N and P-Channel MOSFET transistor in SOP package, suitable for surface mount applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 7A. Offers a low drain-source on-resistance of 18mΩ at a nominal gate-source voltage of 2.5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Includes a turn-off delay time of 110ns and a fall time of 70ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 70ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | SOP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.19nF |
| Power Dissipation | 2W |
| Threshold Voltage | 2.5V |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 18MR |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
