SPB11N60C3
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Краткое описание:
600V 11A N-Channel MOSFET, 380mR Rds On, TO-263
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 380mΩ Rds On and 125W power dissipation. Designed for efficient switching with fast turn-on (10ns) and turn-off (44ns) times, it operates within a -55°C to 150°C temperature range. Packaged in a TO-263-3 surface-mount case, this RoHS compliant component is ideal for high-power applications.
| RoHS | Compliant |
| Width | 9.45mm |
| Height | 4.57mm |
| Length | 10.31mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 380mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 44ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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