SPB80N03S2-03G

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SPB80N03S2-03G - Infineon
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Краткое описание: 30V 80A N-CH MOSFET D2PAK Surface Mount
Производитель Infineon
Категория Транзисторы
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Surface mount TO-263-3 package offers low 3.4mΩ drain-source resistance at 10V Vgs. Designed for high power applications with 300W maximum power dissipation and an operating temperature range of -55°C to 175°C. Fast switching characteristics include 22ns turn-on delay and 90ns turn-off delay.
RoHS Not Compliant
Mount Surface Mount
Series OptiMOS™
Polarity N-CHANNEL
Fall Time 110ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.1mR
Package/Case TO-263-3
Current Rating 80A
RoHS Compliant No
DC Rated Voltage 30V
Package Quantity 1000
Input Capacitance 7.02nF
Power Dissipation 300W
Turn-On Delay Time 22ns
Turn-Off Delay Time 90ns
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.4mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V

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