SPD02N60C3
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Краткое описание:
600V N-Channel MOSFET, 1.8A ID, 3 Ohm Rds(on), TO-252
Дополнительная информация
N-channel power MOSFET with 600V drain-source breakdown voltage and 1.8A continuous drain current. Features 3-ohm drain-source resistance (Rds On Max) and 25W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in TO-252AA (DPAK-3) for surface-mount applications. RoHS compliant and lead-free.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Current | 18A |
| Voltage | 600V |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3R |
| Package/Case | TO-252-3 |
| Current Rating | 1.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1 |
| Input Capacitance | 200pF |
| Power Dissipation | 25W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 6ns |
| Turn-Off Delay Time | 68ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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