SPD03N60C3
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Краткое описание:
600V N-Channel MOSFET, 3.2A, 1.4 Ohm, TO-252
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 3.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.4 ohm Rds On and 150°C maximum operating temperature. Designed for efficient switching with fast turn-on (7ns) and fall (12ns) times, it operates within a -55°C to 150°C temperature range. Packaged in a TO-252AA (DPAK-3) surface-mount plastic package, this RoHS compliant component is ideal for power applications.
| RoHS | Compliant |
| Width | 6.223mm |
| Height | 2.413mm |
| Length | 6.73mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.4R |
| Package/Case | TO-252-3 |
| Current Rating | 3.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1 |
| Input Capacitance | 400pF |
| Power Dissipation | 38W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 64ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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