SPD04N80C3
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Краткое описание:
800V 4A N-Channel MOSFET, 1.3 Ohm, TO-252
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.3 ohm Rds On resistance and 63W power dissipation. Designed for efficient switching, it exhibits a 25ns turn-on delay and 12ns fall time. Packaged in a TO-252AA (DPAK-3) surface-mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.41mm |
| Length | 6.73mm |
| Series | CoolMOS™ |
| Current | 4A |
| Voltage | 800V |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.3R |
| Package/Case | TO-252-3 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 1 |
| Input Capacitance | 570pF |
| Power Dissipation | 63W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 72ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 63W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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