SPD04P10PGBTMA1

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SPD04P10PGBTMA1 - Infineon
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Краткое описание: SIPMOS MOSFET N-Channel 4A 20V TO-252-3 Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The SPD04P10PGBTMA1 is a SIPMOS MOSFET with a maximum continuous drain current of 4A and a drain to source voltage of -100V. It has a maximum operating temperature range of -55°C to 175°C and is packaged in a TO-252-3 surface mount package. The device is RoHS compliant and has a maximum power dissipation of 38W.
RoHS Compliant
Mount Surface Mount
Series SIPMOS®
Fall Time 4.5ns
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 1R
Halogen Free Not Halogen Free
Package/Case TO-252-3
RoHS Compliant Yes
Input Capacitance 319pF
Power Dissipation 38W
Number of Elements 1
Turn-On Delay Time 5.7ns
Turn-Off Delay Time 14ns
Max Power Dissipation 38W
Max Dual Supply Voltage -100V
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4A
Drain to Source Voltage (Vdss) -100V

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