SPD06N80C3
Производится
Увеличить
Краткое описание:
800V 6A N-Channel MOSFET, 0.9ohm, TO-252 DPAK
Дополнительная информация
N-Channel Power MOSFET featuring 800V drain-source breakdown voltage and 6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.9-ohm drain-source resistance (Rds On Max) and 83W maximum power dissipation. Designed for surface-mount applications, it comes in a TO-252AA package with a 3-pin configuration. Key switching characteristics include a 25ns turn-on delay and 8ns fall time, with a nominal gate-source voltage of 3V. This component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.41mm |
| Length | 6.73mm |
| Series | CoolMOS™ |
| Current | 6A |
| Voltage | 800V |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 900mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | TO-252-3 |
| Current Rating | 6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 1 |
| Input Capacitance | 785pF |
| Power Dissipation | 83W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Dual Supply Voltage | 800V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 72ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 900mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
