SPD06N80C3ATMA1

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SPD06N80C3ATMA1 - Infineon
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Краткое описание: 800V 6A N-Ch MOSFET, TO-252, 0.78 Ohm, Surface Mount
Производитель Infineon
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel Power MOSFET, 800V drain-source voltage, 6A continuous drain current, and 0.78 ohm Rds On. Features TO-252 (DPAK) surface mount package, 83W power dissipation, and 150°C max operating temperature. Includes 785pF input capacitance, 8ns fall time, and 25ns turn-on delay. RoHS compliant and halogen-free.
RoHS Compliant
Mount Surface Mount
Series CoolMOS™
Fall Time 8ns
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 900mR
Halogen Free Halogen Free
Package/Case TO-252-3
RoHS Compliant Yes
Input Capacitance 785pF
Power Dissipation 83W
Number of Elements 1
Turn-On Delay Time 25ns
Turn-Off Delay Time 72ns
Max Power Dissipation 83W
Max Dual Supply Voltage 800V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6A
Drain to Source Voltage (Vdss) 800V

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