SPD07N60C3
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Краткое описание:
600V 7.3A N-Channel MOSFET, 600mR Rds(on), TO-252
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 7.3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 600mΩ Rds On and 650V DC rated voltage. Designed for efficient switching, it exhibits a 6ns turn-on delay and 7ns fall time. Encased in a TO-252AA (DPAK-3) package, this RoHS compliant component supports a maximum power dissipation of 83W and operates from -55°C to 150°C.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.41mm |
| Length | 6.73mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 600mR |
| Package/Case | TO-252-3 |
| Current Rating | 7.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1 |
| Input Capacitance | 790pF |
| Power Dissipation | 83W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 6ns |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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