SPI15N65C3
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Краткое описание:
650V 15A N-Channel MOSFET TO-262-3 280mR Rds(on)
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 280mΩ drain-to-source resistance. Designed for efficient switching, it exhibits a 32ns turn-on delay and 11ns fall time. The component is housed in a TO-262-3 package, rated for 156W maximum power dissipation, and operates within a -55°C to 150°C temperature range.
| RoHS | Compliant |
| Width | 4.5mm |
| Height | 9.45mm |
| Length | 10.2mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Nominal Vgs | 3V |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 1.6nF |
| Power Dissipation | 156W |
| Turn-On Delay Time | 32ns |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 156W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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