SPP04N50C3
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Краткое описание:
N-Channel MOSFET, 500V, 4.5A, 950mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, 500V breakdown voltage, 4.5A continuous drain current, and 0.95 ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-220AB package, 50W power dissipation, and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 10ns turn-on delay and 10ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 15.95mm |
| Length | 10.36mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 950mR |
| Package/Case | TO-220-3 |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 500 |
| Input Capacitance | 470pF |
| Power Dissipation | 50W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 560V |
| Drain to Source Breakdown Voltage | 500V |
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