SPP06N80C3
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Краткое описание:
800V 6A N-Channel MOSFET, 0.9ohm, TO-220AB
Дополнительная информация
N-channel power MOSFET featuring 800V drain-source voltage and 6A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 900mΩ at 6A. With a maximum power dissipation of 83W and a gate-source voltage rating of 20V, it operates within a temperature range of -55°C to 150°C. The component is housed in a TO-220-3 package and is RoHS compliant.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Current | 41A |
| Voltage | 800V |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 900mR |
| Package/Case | TO-220-3 |
| Current Rating | 6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 500 |
| Input Capacitance | 785pF |
| Power Dissipation | 83W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
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