SPP07N60C3
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Краткое описание:
600V 7.3A N-Channel MOSFET TO-220
Дополнительная информация
N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 650V DC rated voltage. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 7.3A and a low on-resistance of 600mΩ. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 83W. Key switching characteristics include a 6ns turn-on delay and 7ns fall time.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 600mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| Current Rating | 7.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 500 |
| Input Capacitance | 790pF |
| Power Dissipation | 83W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 650V |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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