SPP11N80C3XKSA1
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Краткое описание:
800V 11A N-Ch MOSFET, 450mR Rds On, TO-220
Дополнительная информация
N-Channel Power MOSFET, 800V Vds, 11A Continuous Drain Current, 450mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting. Key specifications include 156W power dissipation, 1.6nF input capacitance, and fast switching times with a 7ns fall time. Designed for high voltage applications, it operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.57mm |
| Height | 9.45mm |
| Length | 10.36mm |
| Series | CoolMOS™ |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 450mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Halogen Free | Halogen Free |
| Package/Case | TO-220 |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 500 |
| Input Capacitance | 1.6nF |
| Power Dissipation | 156W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Dual Supply Voltage | 800V |
| On-State Resistance | 450mR |
| Turn-Off Delay Time | 72ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 156W |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 390mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 800V |
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