SPP15N60CFDXKSA1

Не рекомендуется для новых проектов
SPP15N60CFDXKSA1 - Infineon
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Краткое описание: 600V N-CH MOSFET 13.4A TO-220 156W
Производитель Infineon
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED FOR NEW DESIGN)

Дополнительная информация

N-channel Power MOSFET featuring 650V drain-source voltage and 13.4A continuous drain current. This through-hole component offers a low 330mΩ drain-to-source resistance and 156W maximum power dissipation. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching characteristics with turn-on delay of 43ns and fall time of 5ns. Packaged in a TO-220-3 case, this RoHS compliant and lead-free MOSFET is ideal for demanding power applications.
RoHS Compliant
Mount Through Hole
Width 4.57mm
Height 15.95mm
Length 10.36mm
Polarity N-CHANNEL
Fall Time 5ns
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 500
Input Capacitance 1.82nF
Power Dissipation 156W
Number of Elements 1
Turn-On Delay Time 43ns
Radiation Hardening No
Turn-Off Delay Time 47ns
Max Power Dissipation 156W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 330mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 13.4A
Drain to Source Voltage (Vdss) 650V

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