SPW11N60C3
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Краткое описание:
600V 11A N-Channel MOSFET TO-247 380mR RdsOn
Дополнительная информация
N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 11A Continuous Drain Current, and 380mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-247-3 package, 125W maximum power dissipation, and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 10ns turn-on delay and 5ns fall time, with 1.2nF input capacitance. RoHS compliant and lead-free.
| RoHS | Compliant |
| Width | 5.21mm |
| Height | 21.1mm |
| Length | 16.13mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Package/Case | TO-247-3 |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 240 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 125W |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 44ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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