SPW11N80C3FKSA1
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Краткое описание:
800V 11A N-Channel MOSFET TO-247 450mR
Дополнительная информация
N-Channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 11A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 450mΩ and a maximum power dissipation of 156W. Designed for through-hole mounting in a TO-247 package, it boasts a 7ns fall time and 25ns turn-on delay time. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Width | 5.21mm |
| Height | 21.1mm |
| Length | 16.13mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Lead Pitch | 5.45mm |
| Rds On Max | 450mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-247-3 |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 240 |
| Input Capacitance | 1.6nF |
| Power Dissipation | 156W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 25ns |
| Dual Supply Voltage | 800V |
| On-State Resistance | 450mR |
| Turn-Off Delay Time | 72ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 156W |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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