SPW35N60C3
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Краткое описание:
Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN
| RoHS | Compliant |
| Width | 5.21mm |
| Height | 21.1mm |
| Length | 16.13mm |
| Series | CoolMOS™ |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 100mR |
| Package/Case | TO-247-3 |
| Current Rating | 34.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 240 |
| Input Capacitance | 4.5nF |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 313W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 34.6A |
| Drain to Source Voltage (Vdss) | 650V |
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